发明名称 METHOD FOR MANUFACTURING TRANSFER MASK SUBSTRATE, TRANSFER MASK SUBSTRATE, AND TRANSFER MASK
摘要 <p>Accuracy of position of a mask pattern is improved by reducing stress change in a thin film layer which occurs during a manufacturing process of a transfer mask. A method for manufacturing a transfer mask is characterized by comprising a further step before formation of a resist layer in which step a stress controlling layer is formed on a thin film layer for offsetting the stress change in the thin film layer which occurs during the manufacturing process of the mask, and by comprising another step wherein the stress controlling layer or the like is etched using a resist pattern as the etching mask.</p>
申请公布号 WO2004044967(A1) 申请公布日期 2004.05.27
申请号 WO2003JP14088 申请日期 2003.11.05
申请人 HOYA CORPORATION;AMEMIYA, ISAO 发明人 AMEMIYA, ISAO
分类号 B81C99/00;G03C5/00;G03F1/20;G03F9/00;H01L21/027;(IPC1-7):H01L21/027;G03F1/14 主分类号 B81C99/00
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