发明名称 LASER DIODE AND METHOD FOR MANUFACTURING LASER DIODE
摘要 PURPOSE: A laser diode and a method for manufacturing the laser diode are provided to previously prevent the leakage current generated during the formation of the single window structure, thereby further simplifying the process of forming the p-capping layer. CONSTITUTION: A laser diode includes a p-cladding layer(14), a ridge(17), a current block layer(18), a dielectric block layer(19) and a p-capping layer(20). The ridge(17) is formed along the top surface of the p-cladding layer(14). The current block layer(18) is formed on both sides of the ridge(17) and on the top surface of the p-cladding layer(14) with a height being similar to that of the ridge(17). The dielectric block layer(19) is formed on the edge portions of the ridge(17) and the current block layer(18). And, the p-capping layer(20) is deposited on the top surface of the ridge(17) and the current block layer(18) except for the dielectric block layer(19).
申请公布号 KR20040043243(A) 申请公布日期 2004.05.24
申请号 KR20020071431 申请日期 2002.11.16
申请人 LG INNOTEC CO., LTD. 发明人 KIM, SANG MUK
分类号 H01S5/30;(IPC1-7):H01S5/30 主分类号 H01S5/30
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