| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable groove wiring by providing a better coverage for the groove opening during the film formation and by forming an overhang-free film for reduction of poor buried copper. SOLUTION: The method for manufacturing a semiconductor device comprises a step of forming a wiring groove 13 on an interlayer insulating film 12 formed on a semiconductor substrate 11, a step of forming a barrier layer 14 assuming a copper diffusion barrier feature all over the interlayer insulating film 12 including the inner walls of the wiring groove 13, a step of forming an electrolytic plating seed layer 15 all over the interlayer insulating film 12 including the inner walls of the wiring groove 13, a step of forming an impurity layer 16 on the seed layer 15 by electrochemical film formation, a step of forming a conductive layer 17 such that it fills up the wiring groove 13, a step of heat treatment for diffusing the element contained in the impurity layer 16 into the conductive layer 17, and a step of removing from on the interlayer insulating film 12 the surplus parts of the conductive layer 17 through the barrier layer 14. COPYRIGHT: (C)2004,JPO
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