发明名称 Silicon device manufacturing method, silicon device, and optical component
摘要 The silicon substrate is masked on one surface of the silicon substrate where structures like combs and beams of comb drive are not to be formed on the other surface. The unmasked areas are then etched followed by masking areas on the other surface corresponding to the structures. Finally, the unmasked areas on the other surface are again etched by anisotropic reactive ion etching to form the structures.
申请公布号 US6730535(B2) 申请公布日期 2004.05.04
申请号 US20020291899 申请日期 2002.11.08
申请人 THE FURUKAWA ELECTRIC CO., LTD. 发明人 MORIMOTO KOJI;SATO KOUKI;MORIMOTO MASAHITO;TORIUMI KAZUHIRO;TSUCHIYA TAICHI
分类号 G02B26/02;B81B3/00;B81C1/00;G02B6/35;G02B6/36;G02B26/08;(IPC1-7):H01L21/00 主分类号 G02B26/02
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