发明名称 |
Silicon device manufacturing method, silicon device, and optical component |
摘要 |
The silicon substrate is masked on one surface of the silicon substrate where structures like combs and beams of comb drive are not to be formed on the other surface. The unmasked areas are then etched followed by masking areas on the other surface corresponding to the structures. Finally, the unmasked areas on the other surface are again etched by anisotropic reactive ion etching to form the structures.
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申请公布号 |
US6730535(B2) |
申请公布日期 |
2004.05.04 |
申请号 |
US20020291899 |
申请日期 |
2002.11.08 |
申请人 |
THE FURUKAWA ELECTRIC CO., LTD. |
发明人 |
MORIMOTO KOJI;SATO KOUKI;MORIMOTO MASAHITO;TORIUMI KAZUHIRO;TSUCHIYA TAICHI |
分类号 |
G02B26/02;B81B3/00;B81C1/00;G02B6/35;G02B6/36;G02B26/08;(IPC1-7):H01L21/00 |
主分类号 |
G02B26/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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