SELF-ALIGNED CONTACT ETCH WITH HIGH SENSITIVITY TO NITRIDE SHOULDER

摘要

A method and apparatus are provided for etching semiconductor and dielectric substrates through the use of plasmas based on mixtures of a first gas having the formula CaFb, and a second gas having the formula CxHyFz, wherein a/b >/= 2/3, and wherein x/z >/= 1/2. The mixtures may be used in low or medium density plasmas sustained in a magnetically enhanced reactive ion chamber to provide a process that exhibits excellent corner layer selectivity, photo resist selectivity, under layer selectivity, and profile and bottom CD control. The percentages of the first and second gas may be varied during etching to provide a plasma that etches undoped oxide films or to provide an etch stop on such films.