Data access method for dynamic random access memory, involves generating page mode enable signal for maintaining activated state of primary word line corresponding to primary address while activating secondary word line

摘要

The method involves activating a primary word line corresponding to a primary address and receiving a secondary address. A page mode enable signal is generated for maintaining an activated state of primary word line corresponding to the primary address while activating a secondary word line corresponding to the secondary address. The word lines are deactivated in response to disabling of the page mode enable signal. An Independent claim is also included for a semiconductor memory system.