| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce a burden of man-hours and has stable capacitance elements corresponding to miniaturization, and to provide its manufacturing method. SOLUTION: In an interlayer insulating film 11 formed on a semiconductor substrate, electrical via connection regions 121, 122 related to an unshown lower wiring layer or elements are formed. In the via connection region 121, one-wiring layer metal 13 is formed. This one-wiring layer metal 13 consists of two divided layers of a lower layer 131 and an upper layer 132. In a partial region of the two layers 131, 132, a capacitor insulating film 14 is arranged between the two layers to form a capacitance element C1. The via connection region 122 is connected to the lower layer 131 of the wiring layer metal 13, or the lower electrode of the capacitance element C1, and the via connection region 162 is connected to the upper layer 132 of the one-wiring layer metal 13, or an upper electrode of the capacitance element C1. COPYRIGHT: (C)2004,JPO
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