发明名称 |
Ultra-high capacitance device based on nanostructures |
摘要 |
The present invention discloses a method including providing a substrate; forming a lower conductor over the substrate; forming a conducting nanostructure over the lower conductor; forming a thin dielectric over the conducting nanostructure; and forming an upper conductor over the thin dielectric. The present invention further discloses a device including a substrate; a lower conductor located over the substrate; a conducting nanostructure located over the lower conductor; a thin dielectric located over the conducting nanostructure; and an upper conductor located over the thin dielectric.
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申请公布号 |
US2004058504(A1) |
申请公布日期 |
2004.03.25 |
申请号 |
US20020251197 |
申请日期 |
2002.09.20 |
申请人 |
KELLAR SCOT A.;KIM SARAH E. |
发明人 |
KELLAR SCOT A.;KIM SARAH E. |
分类号 |
G11C13/02;H01G4/008;H01G4/33;H01L21/02;H01L21/8242;H01L27/08;(IPC1-7):H01L21/20 |
主分类号 |
G11C13/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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