| 摘要 |
PURPOSE: To provide a semiconductor device which can secure sufficient breakdown voltage, even if a silicide layer is formed on a source/drain region, and to provide a method of manufacturing the same. CONSTITUTION: The semiconductor device comprises gate electrodes 26 formed on a semiconductor substrate 10, source region 45a having a lightly-doped source region 42a and a heavily-doped source region 44a, drain region 45b having a lightly doped drain region 42b and a heavily-doped drain region 44b, first silicide layer 40c formed on the source region, second silicide region 40d formed on the drain region, first conductor plug 54 connected to the first silicide layer, and second conductor plug 54 connected to the second silicide layer. The heavily-doped drain region is formed in the lightly-doped drain region, except for a peripheral part, while the second silicide layer is formed in the heavily-doped region, except for the peripheral parts.
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