| 摘要 |
The CMOS image sensor includes a pixel array with M(row line)xN(column line) unit pixels, M and N being a positive integer, respectively, wherein each unit pixel includes a light sensing element, coupled to a sensing node, for receiving light from an object to generate photoelectric charges, a resetting unit, coupled to the sensing node, for making a fully depleted region within the light sensing unit and providing a reset voltage level to the sensing node in response to a first control signal, wherein the reset voltage level corresponds to a level of the first control signal and is supplied to a unit pixel of a next row line as a power source, arranged on the same column line, an amplifying unit for amplifying the voltage level of the sensing node to generate an amplified signal, wherein a power source of the amplifying unit is derived from a unit pixel of a previous row line, arranged on the same column line, and a switching unit, coupled between the amplifying unit and an output terminal, for performing a switching operation to transfer the amplified signal to the output terminal in response to a second control signal, thereby decreasing the chip size and preventing an erroneous CDS operation.
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