| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a ferroelectric film for stably forming the ferroelectric film having a large amount of polarized charge. SOLUTION: A wafer 20 is fixed to a supporting table main body 40 with a curved upper surface by a clamp 41. Next, the wafer is inserted into an MOCVD (metal organic chemical vapor deposition) device to form the ferrodielectric film on the wafer 20. Subsequently, the wafer is left until reaching a temperature not higher than the curie temperature of the ferroelectric film and, thereafter, the clamp 41 is removed and the configuration of the wafer 20 is returned to the initial state of the same. According to this method, a compressive force is applied on the ferroelectric film whereby the amount of polarized charge of the ferroelectric film is increased by the piezo-electric effect. COPYRIGHT: (C)2004,JPO
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