| 摘要 |
PROBLEM TO BE SOLVED: To improve working precision of a etching shaped article compared to an etching method of working a shaped article such as a quartz crystal substrate, etc. SOLUTION: When the quartz crystal substrate 2 is processed by etching for forming a tuning fork type quartz crystal wafer with a trench 11c in a center of the main face, only both sides of the trench 11c are processed, and side trenches 11d, 11d are formed. In this case, appropriate etching volume is processed using etching stop technology. Afterward, the trench 11c of a desired shape is formed by etching residual quartz crystal between the side trenches 11d, 11d. COPYRIGHT: (C)2004,JPO
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