MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for manufacturing the semiconductor device having no deterioration of forward voltage (VF) characteristics and peak surge current (IFS) characteristics in a comparatively short process. SOLUTION: The manufacturing method of the semiconductor device comprises a groove forming process for forming a groove 20 of a depth exceeding pn junction from one surface of a semiconductor base substance 10 with pn junction formed in parallel on a main face, a glass layer forming process for forming a glass layer 24 on the inner face of the groove 20, a semiconductor base substance grinding process for grinding one surface 32 of the semiconductor base substance with a plane grinding machine or a plane polishing machine, and an electrode forming process for forming an electrode 34 on at least one surface of the semiconductor base substance in this order. COPYRIGHT: (C)2004,JPO