| 摘要 |
A static random access element is comprised of three transistors and two resistors. Two transistors have their gates and drains cross connected to the respective drains and gates of the opposite transistor. Two resistors make the connection from a power supply to the drains of each of the two transistors. A first control line is connected at the junction of the two resistors. The source of a third transistor is connected to the gate of one of the first transistors and the drain of the third transistor is connected to a second control line and a power supply. The gate of the third transistor is connected to a third control line. The three transistor SRAM cell is more compact and requires fewer control lines than typical SRAM cells.
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