SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress facet formation in a process of epitaxial growth on the walls in a trench formed in a substrate. SOLUTION: In a SiC substrate 10, an off-angle is provided in the (0001) plane, and the off-direction is set at <11-20>. A trench 11 is formed in the SiC substrate 10, and extends in the <11-20> direction. A SiC layer is epitaxially grown on the walls in the trench 11. COPYRIGHT: (C)2004,JPO