METHOD AND APPARATUS FOR FORMING ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an electrode of a semiconductor device is provided to prevent chlorine ions from being diffused to an underlying polysilicon layer and avoid abnormal growth of polysilicon by making a crystalline polysilicon layer capped with an amorphous silicon layer. CONSTITUTION: Tungsten silicide is formed after an amorphous silicon thin film is formed on the polysilicon layer so that the chlorine ions used in a process for forming the tungsten silicide are prevented from being diffused to the polysilicon layer. The amorphous silicon layer is 50 angstrom or more in thickness. The polysilicon layer is formed of either polysilicon or polysilicon crystallized from amorphous silicon.