| 摘要 |
An integrated circuit protecting an I/O pad 303 against an ESD pulse, the circuit having in the same substrate a discharge sub-circuit 301 and a drive sub-circuit 302, each sub-circuit including an MOS transistor. The circuit comprises a direct connection between the I/O pad 303 and the drain 321 of the drive sub-circuit MOS transistor 306, and further a forward diode 360 inserted between the I/O pad 303 and the drain 311 of the discharge sub-circuit MOS transistor 305 to isolate the junction capacitance of the discharge sub-circuit MOS transistor, whereby electrical noise coupling to the substrate is reduced, RF/analog input signals are improved, and leakage at the I/O pad is reduced.
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