NICKEL SILICON BASED THIN FILM, NICKEL SILICON BASED MULTI-LAYERED FILM STRUCTURE, AND METHOD FOR MANUFACTURING NICKEL SILICON BASED THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a new nickel silicon thin film whose physical characteristics never deteriorate even when used at a high temperature and a manufacturing method therefor. SOLUTION: On a silicon substrate 1, a silicon and carbon containing base film 2 and a nickel containing thin film 3 are formed in order by using a known filming method to form a multi-layered structure 5. Then this multi-layered structure 5 is heat-treated for mutually diffusing silicon elements in the silicon substrate 1, silicon elements and carbon elements in the base film 2, and nickel elements in the nickel containing thin film 3 and subject them to chemical reaction, thereby manufacturing the nickel silicon based thin film 6 containing carbon. COPYRIGHT: (C)2004,JPO