| 摘要 |
PURPOSE: A method for forming an interconnection of a semiconductor device is provided to simplify a fabricating process by depositing a barrier metal layer once, and to uniformly form a metal interconnection and a plug by depositing a tungsten layer by a selective CVD(chemical vapor deposition) process in a condition of a low pressure and a low temperature. CONSTITUTION: An ILD(interlayer dielectric) layer(22) is formed on a semiconductor substrate(21). An IMD(intermetal dielectric) pattern layer(23a) having metal interconnection formation regions is formed on the ILD layer. The ILD layer in the metal interconnection formation region between the IMD pattern layers is selectively etched to a contact hole that has a damascene structure to expose a predetermined portion of the surface of the substrate. A barrier metal layer(27) is formed in the contact hole and on the side surface of the IMD pattern layer. A metal interconnection(28) and a plug that have the same height as the IMD pattern layer are formed in the contact hole and on the barrier metal layer between the IMD pattern layers by a selective CVD process.
|
