| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to improve operating speed by enhancing the contact area between a bitline contact and a landing plug. CONSTITUTION: A field oxide layer(32) is formed at a semiconductor substrate(31) to define an active region. After forming the first interlayer dielectric(37a) on the resultant structure, a landing plug(38a) is formed to contact the entire region of the active region and portions of the field oxide layer through the first interlayer dielectric. The second interlayer dielectric(39) is formed on the resultant structure. A bitline(41) is formed to contact the field oxide layer through the second interlayer dielectric and the landing plug.
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