| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of improving the electrical characteristic and reliability of the device and stably securing a threshold voltage at the whole region of a wafer by forming a diffusion barrier by implanting inert ions before implanting threshold voltage ions. CONSTITUTION: After forming a sacrificial oxide layer(2) at the upper portion of a semiconductor substrate(1), a triple structure well is formed at the predetermined portion of the semiconductor substrate. A diffusion barrier(3) is formed at the inner portion of the semiconductor substrate by implanting inert ions into the resultant structure. Then, threshold voltage controlling ions are implanted into the semiconductor substrate. After removing the sacrificial oxide layer, a tunnel oxide layer, a polysilicon layer, and a pad nitride layer are sequentially formed at the upper portion of the resultant structure.
|
