| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device in which the number of reference cells used as the reference is reduced. <P>SOLUTION: A memory cell array 11 includes a bit line BL (BLT or BLN) to which a plurality of memory cells 21 are connected. A reference cell array 12 includes a reference cell bit line RB (RBT or RBN) to which a prescribed number of reference cells 22 are connected. A sense amplifier 24 amplifies the potential difference between the bit line BL and the reference bit line RB, in reading out data. The capacitance and the resistance of the bit line BL and the capacitance and the resistance of the reference bit line RB connected to the same sense amplifier 24 are adjusted at approximately the same values. <P>COPYRIGHT: (C)2004,JPO |
