发明名称 |
THIN FILM TRANSISTOR APPARATUS AND MANUFACTURING METHOD THEREOF, THIN FILM TRANSISTOR SUBSTRATE PROVIDED WITH THE SAME, AND DISPLAY APPARATUS |
摘要 |
PURPOSE: To provide a TFT apparatus having excellent characteristics and high reliability, a manufacturing method thereof, a TFT substrate provided with the same, and a display apparatus. CONSTITUTION: A metal thin film is formed on a gate insulation film 4, patterning is applied to a metal thin film to remove the metal thin film on a semiconductor layer 3b to form a source and drain region 301 of an n-type TFT, phosphorus ions are injected by using the metal thin film 5b subjected to the patterning for a mask to form the source and drain region 301, patterning is further applied to the metal thin film 5b subjected to the patterning to form a gate electrode 52 of the n-type TFT, and phosphorus ions are injected by using the gate electrode 52 for a mask to form an LDD region 306 between the source and drain region 301 and a channel region 307.
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申请公布号 |
KR20040004177(A) |
申请公布日期 |
2004.01.13 |
申请号 |
KR20030045327 |
申请日期 |
2003.07.04 |
申请人 |
FUJITSU DISPLAY TECHNOLOGIES CORPORATION |
发明人 |
KUROSAWA YOSHIO;HOTTA KAZUSHIGE |
分类号 |
G02F1/1368;G02F1/136;H01L21/336;H01L21/77;H01L21/8238;H01L21/84;H01L27/08;H01L27/092;H01L27/12;H01L29/786;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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