| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device excellent in element characteristics and reliability with high yield by carrying out dry etching of a multilayer film having an SiGe film containing Si and Ge and an oxide film to form a gate electrode pattern and a gate oxide film pattern, and then sufficiently removing dry etched products or particles adhering to a semiconductor substrate without damaging the SiGe layer or the gate oxide film configuring the gate electrode. SOLUTION: This method for manufacturing a semiconductor device comprises a patterning process of carrying out dry etching of a multilayer film where an oxide film and an SiGe film are formed in this order on the semiconductor substrate to form a gate electrode pattern and an oxide film pattern, a first process of washing the semiconductor substrate by using first chemicals consisting of hydrofluoric acid after the patterning process, and a second process of washing the semiconductor substrate by using second chemicals consisting of the mixed solution of aqueous ammonia and oxygenated water after the first washing process. COPYRIGHT: (C)2004,JPO
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