SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device in which a plurality of transistors which are a darlington circuit are connected to an output terminal of a semiconductor circuit to enhance a breakdown resistance. SOLUTION: A protection circuit 1b having a plurality of bipolar transistors Q1 to Q10 which are the darlington circuit is electrically connected to an output (between a collector and an emitter) of an amplifier circuit 3 of a high output in parallel to the amplifier circuit 3. The amplifier circuit 3 is constituted to have a plurality of unit HBTs (hetero-junction bipolar transistors) QH1 to QHn which are connected in parallel to each other. Further, the protection circuit 1b is constituted in two steps of having first and second groups consisting of a protection circuit 1b1 having the bipolar transistors Q1 to Q5 and the bipolar transistors Q6 to Q10. COPYRIGHT: (C)2004,JPO