| 摘要 |
PURPOSE: A method for fabricating a metal interconnection of a semiconductor device is provided to prevent a plate electrode from being punched in the first metal interconnection contact process by forming a buffer nitride layer on the plate electrode. CONSTITUTION: A wordline(13), a bitline(23) and a planarized insulation layer including a capacitor are formed on a semiconductor substrate(11) wherein the buffer nitride layer is formed on the plate electrode(35) of the capacitor. The insulation layer is etched by a photolithography process using a metal interconnection contact mask to form a contact hole exposing the plate electrode, the bitline, the wordline and the semiconductor substrate.
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