| 摘要 |
PURPOSE: A method for fabricating a transistor is provided to prevent a short channel phenomenon and punch-through by growing an epitaxial layer on a semiconductor substrate in a portion for a source/drain region and by forming the source/drain region in the epitaxial layer. CONSTITUTION: A gate electrode including a hard mask layer(39) in its upper portion is formed on the semiconductor substrate(31) by interposing a gate insulation layer. The first insulation layer spacer is formed on the sidewall of the gate electrode. The epitaxial layer is formed on the exposed substrate. Low density impurity ions of the second conductivity type are implanted into the epitaxial layer by using the gate electrode as a mask. The second insulation layer spacer is formed on the sidewall of the gate electrode including the first insulation layer spacer. High density impurity ions of the second conductivity type are implanted by using the gate electrode and the first and second insulation layer spacers as a mask. The high density impurity ions are diffused to form the source/drain region(47) of a lightly-doped-drain(LDD) structure in the epitaxial layer at both sides of the gate electrode and in the semiconductor substrate.
|
