发明名称 METHOD FOR DESIGNING PHASE GRATING PATTERN PROVIDING MODIFIED ILLUMINATION AND METHOD FOR FABRICATING PHOTO-MASK BY USING THE SAME
摘要 PURPOSE: A method for designing a phase grating pattern providing modified illumination and a method for fabricating a photo-mask by using the same are provided to improve a process margin by obtaining a desired modified illumination system in a mask system level without modifying an optical exposure apparatus. CONSTITUTION: Arbitrary modified illumination is selected to transfer a predetermined pattern on a wafer in a photo-lithography process(110). An unit region for forming a phase grating portion is set up to provide the modified illumination. The unit region is divided into a plurality of lower cells. A plurality of arbitrary phase values as initial phase values are assigned to the lower cells, respectively. One cell is selected from the lower cells(120). A process for changing a phase value of the selected lower cell is repeatedly performed to change the arrangement of the phase values assigned to the lower cells and find the arrangement of the phase values corresponding to the modified illumination(130-160).
申请公布号 KR20040000655(A) 申请公布日期 2004.01.07
申请号 KR20020035171 申请日期 2002.06.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, JONG RAK
分类号 G02B5/18;G03F1/26;G03F1/68;G03F1/76;G03F7/20;H01L21/027 主分类号 G02B5/18
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