| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to ultimately improve yield of the semiconductor device by preventing a contact open defect in forming a contact. CONSTITUTION: An anti-reflective coating(ARC) and a photoresist pattern are sequentially formed on an etch target layer on a substrate(20). The ARC is selectively removed to expose the surface of the etch target layer by using the photoresist pattern as an etch mask. An over-etch process is performed on the ARC to remove the scum generated in forming the photoresist pattern in an etch condition that the etch selectivity of photoresist regarding the etch target layer is great. The exposed etch target layer is selectively etched to form a contact hole exposing the surface of the substrate by using at least the photoresist pattern as an etch mask.
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