发明名称 |
Method of forming a thin film |
摘要 |
A method of maintaining a plasma electrode and a substrate holder in a deposition chamber of a plasma enhanced chemical vapor deposition system is provdied. Each of the plasma electrode and the substrate holder comprises an aluminum-based material coated with an alumina protection film. The method comprises the steps of: after a plasma enhanced chemical vapor deposition process is carried out to a substrate, taking out the substrate from the deposition chamber; introducing a reaction gas into the deposition chamber; causing a reaction of the reaction gas for cleaning an inner wall of the deposition chamber; introducing an oxygen-containing gas into the deposition chamber; and generating an oxygen-containing gas plasma to form the alumina protection film on surfaces of the plasma electrode and the substrate holder.
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申请公布号 |
US6663748(B2) |
申请公布日期 |
2003.12.16 |
申请号 |
US20020117199 |
申请日期 |
2002.04.08 |
申请人 |
NEC LCD TECHNOLOGIES, LTD. |
发明人 |
KODAMA SHINICHI |
分类号 |
H05H1/46;B01J19/08;C23C16/44;C23C16/509;H01L21/205;H01L21/302;H01L21/3065;H01L21/31;(IPC1-7):C23F1/00 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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