发明名称 Method of forming a thin film
摘要 A method of maintaining a plasma electrode and a substrate holder in a deposition chamber of a plasma enhanced chemical vapor deposition system is provdied. Each of the plasma electrode and the substrate holder comprises an aluminum-based material coated with an alumina protection film. The method comprises the steps of: after a plasma enhanced chemical vapor deposition process is carried out to a substrate, taking out the substrate from the deposition chamber; introducing a reaction gas into the deposition chamber; causing a reaction of the reaction gas for cleaning an inner wall of the deposition chamber; introducing an oxygen-containing gas into the deposition chamber; and generating an oxygen-containing gas plasma to form the alumina protection film on surfaces of the plasma electrode and the substrate holder.
申请公布号 US6663748(B2) 申请公布日期 2003.12.16
申请号 US20020117199 申请日期 2002.04.08
申请人 NEC LCD TECHNOLOGIES, LTD. 发明人 KODAMA SHINICHI
分类号 H05H1/46;B01J19/08;C23C16/44;C23C16/509;H01L21/205;H01L21/302;H01L21/3065;H01L21/31;(IPC1-7):C23F1/00 主分类号 H05H1/46
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