发明名称 Dünnschichtkondensator und Herstellungsverfahren
摘要 <p>A NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal electrode are sequentially laminated on a metal electrode, thus providing a thin film capacitor. Or alternatively, a thin film capacitor is manufactured by sequentially laminating a NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a platinum thin layer as a lower electrode oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal thin layer as an upper electrode on a substrate. A plasma-enhanced CVD method is applied to form a NaCl oxide thin layer, a spinel oxide thin layer and a perovskite dielectric thin layer while a vacuum deposition method, a sputtering method, a CVD method or a plasma-enhanced CVD method is applied for the formation of a metal electrode.</p>
申请公布号 DE69431971(T2) 申请公布日期 2003.11.27
申请号 DE1994631971T 申请日期 1994.03.24
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 FUJII, EIJI;TOMOZAWA, ATSUSHI;TORII, HIDEO;HATTORI, MASUMI;TAKAYAMA, RYOICHI;FUJII, SATORU
分类号 H01G4/20;(IPC1-7):H01G4/06;H01L21/320 主分类号 H01G4/20
代理机构 代理人
主权项
地址