发明名称 Plasma processing method and apparatus and tray for plasma processing
摘要 Provided is a plasma processing method and apparatus and a tray for plasma processing, which are able to improve the temperature controllability of a substrate. If a vacuum chamber is evacuated by a pump while introducing a specified gas by a gas supply unit into the vacuum chamber and a high-frequency power is applied by a coil use high-frequency power supply to a coil while maintaining the interior of the vacuum chamber to a specified pressure, then plasma is generated in the vacuum chamber, and a substrate placed on a substrate electrode can be subjected to plasma processing. At this time, by providing an adhesive sheet between the substrate electrode and the substrate, the temperature controllability of the substrate can be improved.
申请公布号 US2003215578(A1) 申请公布日期 2003.11.20
申请号 US20030408261 申请日期 2003.04.08
申请人 OKUMURA TOMOHIRO;NITTA TOSHINARI 发明人 OKUMURA TOMOHIRO;NITTA TOSHINARI
分类号 C03C17/23;C03C19/00;H01L21/00;H01L21/687;(IPC1-7):H05H1/24;H01L21/461;C03C25/68 主分类号 C03C17/23
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