发明名称 |
Formation of a vertical junction throuph process simulation based optimization of implant doses and energies |
摘要 |
A substantially vertical isolation junction between semiconductor devices is provided. The substantially vertical junction between a P-doped region and an N-doped region allows the P-doped region to be adjacent to the N-doped region with a lateral stagger with a width that is less than 0.1 of the depth. The substantially vertical junction is created by placing a first mask over part of a substrate. A first series of implants of a first dopant is implanted in the substrate. The first mask is removed and a second mask is placed over part of the substrate. A second series of implants of a second dopant of a second conductivity is then implanted in the substrate. A substantially vertical junction results.
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申请公布号 |
US6645854(B1) |
申请公布日期 |
2003.11.11 |
申请号 |
US20010025079 |
申请日期 |
2001.12.19 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
HOPPER PETER J. |
分类号 |
H01L21/425;H01L21/44;H01L21/761;H01L21/8238;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/425 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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