发明名称 REFRESH APPARATUS FOR SEMICONDUCTOR MEMORY DEVICE AND REFRESH METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a refresh apparatus for a semiconductor memory device in which normal cell and a redundant cell can be a simultaneously refreshed and a test time can be shortened, and a refresh method. SOLUTION: This apparatus is provided with a redundant cell refresh signal generator 150 for generating a redundant cell refresh signal PTX<SB>-</SB>REF in response to a test mode signal TM and a refresh request signal RFH, a word line enable signal generator 160 for generating a normal main word line enable signal XDEN and a redundant main word line enable signal RXDEN in response to this output and a redundant cell test mode signal TM<SB>-</SB>XRED, and a word line driver 210 for simultaneously controlling word lines of both cells in response to this output, the redundant cell test mode signal TM<SB>-</SB>XRED, the redundant cell refresh signal PTX<SB>-</SB>REF, and a plurality of row address signals BXA<3:6>. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003297092(A) 申请公布日期 2003.10.17
申请号 JP20020349722 申请日期 2002.12.02
申请人 HYNIX SEMICONDUCTOR INC 发明人 YOON SEOK CHEOL;LEE JAE JIN;KANG SANG HEE;KIM CHUL HO
分类号 G11C29/56;G11C11/401;G11C11/406;G11C11/408;G11C29/00;G11C29/24;(IPC1-7):G11C29/00 主分类号 G11C29/56
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