SUSCEPTER, AND DEVICE FOR MANUFACTURING EPITAXIAL WAFER AND METHOD FOR MANUFACTURING EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a suscepter and a device and method for manufacturing a silicon epitaxial wafer capable of easily obtaining the in-face evenness of a dopant concentration and a resistance ratio.

SOLUTION: This suscepter 20 (30) for supporting a semiconductor substrate W at the time of vapor growth is provided with a communicating part 22 for communicating the atmosphere of a clearance between a face 21b (32) facing both sides of the semiconductor substrate W in a state that the semiconductor substrate W is supported and the semiconductor substrate W with the atmosphere of the outer periphery of the suscepter 20 (30). The communicating part 22 is constituted by forming a groove 25 connecting a spot facing 21 to the outer peripheral edge face 24 of the suscepter 20.

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