| 摘要 |
<p>In a rear-junction type photovoltaic element, a p-n junction and electrodes (15, 16) are formed on a rear surface opposite to a light incident surface of a (semiconductor) silicon substrate (11). The photovoltaic element has an intrinsic semiconductor film (12) having a thickness ranging from 0.1 nm to 50 nm. The intrinsic semiconductor film (12) is disposed on the rear surface of the semiconductor substrate (11). P-type conductive semiconductor portions (13) and n-type conductive semiconductor portions (14) are disposed on the intrinsic semiconductor film (12), respectively. A first electrode (15) and a second electrode (16) are connected to the p-type conductive semiconductor portions (13) and the n-type conductive semiconductor portions (14), respectively.</p> |
