发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR LAYER, AND SEMICONDUCTOR LAYER MANUFACTURING SYSTEM
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor layer manufacturing method for restraining damages in a mask with low-output laser energy density, and to provide a semiconductor layer manufacturing system using the semiconductor layer manufacturing method. <P>SOLUTION: In the semiconductor layer manufacturing method, a semiconductor is irradiated with a laser for manufacturing the semiconductor layer. The semiconductor layer manufacturing method includes a process for exposing the mask to a laser beam, a process for irradiating the laser beam which passes through the mask by a multiple of 1, and a process for summing first energy density and second density for hearing a specific region in the semiconductor by a process for exposing a specific region in the semiconductor to the irradiated laser beam having the first energy density and by a process for exposing a specific region in the semiconductor to lamp light having the second energy density. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2003282442(A) 申请公布日期 2003.10.03
申请号 JP20030059247 申请日期 2003.03.05
申请人 SHARP CORP 发明人 VOUTSAS APOSTOLOS;HARTZELL JOHN W
分类号 B23K26/06;G02B13/26;H01L21/20;H01L21/26;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L21/20 主分类号 B23K26/06
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