发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device wherein a semiconductor substrate (circuit device) having potential defects each comprising fine slits and fine pin holes produced owing to particles and the like is sorted and removed securely with a simplified method. SOLUTION: There are provided a first process for forming a predetermined conductive pattern for circuit wiring on the semiconductor substrate on which a circuit device is formed; a second process for forming an insulating film over the entire surface, on the semiconductor substrate on which the conductive pattern is formed; a third process for dipping the semiconductor substrate on which the insulating film is formed in an acidic solution; and a fourth process for inspecting an actuation state of the circuit device which is executed after the third process. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003282658(A) 申请公布日期 2003.10.03
申请号 JP20020078137 申请日期 2002.03.20
申请人 DENSO CORP 发明人 NARUSE TAKAYOSHI
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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