发明名称 Method of producing an etch-resistant polymer structure using electron beam lithography
摘要 The present invention relates to a method of producing a structure of etch-resistant polymer on a substrate. A layer of sterol capable of polymerizing to form this structure is first deposited on a face of the substrate. Then, a first region of the layer of sterol is exposed to an electron beam to locally polymerize this layer and form the structure of etch-resistant polymer. A second region of the layer of sterol that has not been exposed to the electron beam is removed to leave on the face of the substrate only the structure of etch-resistant polymer. Finally, a region of the face of the substrate not covered by the structure of etch-resistant polymer can be etched away, and the structure of etch-resistant polymer removed following this etching.
申请公布号 US2003180627(A1) 申请公布日期 2003.09.25
申请号 US20020103643 申请日期 2002.03.20
申请人 QUANTISCRIPT INC. 发明人 LAVALLEE ERIC;BEAUVAIS JACQUES;DROUIN DOMINIQUE;CLOUTIER MELANIE
分类号 G03F1/78;G03F1/22;G03F7/004;H01L21/308;(IPC1-7):G03F1/00;G21K4/00;B44C1/22 主分类号 G03F1/78
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