发明名称 |
Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers |
摘要 |
Floating trap non-volatile memory devices and methods are provided. The memory devices include a semiconductor substrate and an adjacent gate electrode. Between the substrate and the gate electrode may be a tunneling insulating layer having a first dielectric constant, a blocking insulating layer having a second dielectric constant that is greater than the first dielectric constant, and a charge storage layer.
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申请公布号 |
US6858906(B2) |
申请公布日期 |
2005.02.22 |
申请号 |
US20020184328 |
申请日期 |
2002.06.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE CHANG-HYUN;CHOI JUNG-DAL;YE BYOUNG-WOO |
分类号 |
H01L21/8247;G11C11/34;H01L21/28;H01L21/336;H01L21/8246;H01L27/115;H01L29/423;H01L29/51;H01L29/76;H01L29/78;H01L29/788;H01L29/792;H01L31/0328;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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地址 |
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