| 发明名称 |
HETERO-JUNCTION BIPOLAR TRANSISTOR |
| 摘要 |
PROBLEM TO BE SOLVED: To sharply improve reliability by extending the life of an InGaP emitter HBT. SOLUTION: Trace As is added to an InGaP emitter layer with an addition rate ranging from 0.05 to 3.0%. COPYRIGHT: (C)2003,JPO
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| 申请公布号 |
JP2003257986(A) |
申请公布日期 |
2003.09.12 |
| 申请号 |
JP20020052513 |
申请日期 |
2002.02.28 |
| 申请人 |
HITACHI CABLE LTD |
发明人 |
SASAKI YUKIO;FUJIO SHINJIRO;OTOGI YOHEI |
| 分类号 |
H01L21/331;H01L29/737;(IPC1-7):H01L21/331 |
主分类号 |
H01L21/331 |
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