SEMICONDUCTOR STRUCTURES COMPRISING A PIEZOELECTRIC MATERIAL AND CORRESPONDING PROCESSES AND SYSTEMS

摘要

High quality epitaxial layers of piezoelectric monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers (243) by forming a compliant substrate for growing the piezoelectric monocrystalline layers. An accommodating buffer layer (272) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (260) of silicon oxide. The amorphous interface layer permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying piezoelectric monocrystalline material layer (290) made of e.g. a III-V semiconductor compound such as AlGaAs.