| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the problem that the so-called source side injection type memory element has large power consumption for writing, delay of write pulses, and unread pits influenced during reading. <P>SOLUTION: For example, when writing or erasure is carried out, a specified drain voltage Vd is applied to a source-drain region (BLa) on the side of a 1st electrode MGa on a laminated film GD having charge storage capability, on the basis of a source-drain region (BLb) on the side of a 2nd gate CG on a dielectric film GDO of a single layer, having no charge storage capability. Then a 1st gate voltage Vmg is applied to the 1st gate electrode MGa, and a 2nd gate voltage Vcg begins to be applied in the middle of the injection so that electric charges excited in terms of energy in a channel-forming region CH1 below nearby the space between gate electrodes are injected into the laminated film GD below the 1st gate electrode MGa from the source side. <P>COPYRIGHT: (C)2003,JPO</p> |
