| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a defect inspection apparatus for speeding up inspection with high resolution for a technique in inspecting defects, foreign materials, residues, and steps, etc., using electron beam for a pattern on a wafer in a manufacturing process for a semiconductor device. <P>SOLUTION: On the surface of an inspected semiconductor sample 7 an electric field is formed for the deceleration of an electron beam, the electron beam including the energy components not reaching the surface of the inspected semiconductor and having a constant area (area beam), is reflected immediately near the surface of the inspected semiconductor and is imaged with an imaging lens 11, and the images of the plurality of regions on the surface of the inspected semiconductor are acquired, which are stored in image storage parts. The stored images in the plurality of regions are compared to each other, to measure the defects in the region as well as the defect positions. <P>COPYRIGHT: (C)2003,JPO</p> |
