| 摘要 |
PURPOSE: An inductor making method is provided to be capable of improving the productivity as compared with a transformer mechanically fabricated using a semiconductor fabrication process and packaging a transformer at a different circuit device easily. CONSTITUTION: After forming an etching stop film on a wafer, a trench is formed at the water(11) by etching the etching stop film and the water using an etching film where an inductor formation region is opened. An oxide film(14) is buried in the trench. After removing the etching stop film, a via hole is formed by etching a part of the oxide film until the wafer is exposed. A via plug(16) is formed by filling up the via hole with a plug material. A material layer for an inductor is formed on an entire surface of a result structure including the oxide film where the via plug is formed. A spiral inductor(170) connected to the via plug is formed on the oxide film by patterning the material layer for the inductor.
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