| 发明名称 |
METHOD FOR FORMING RUTHENIUM STORAGE ELECTRODE OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE: A method for forming a Ru storage electrode of a semiconductor device is provided to be capable of minimizing losses of the Ru storage electrode and simplifying manufacturing processes. CONSTITUTION: An opening part is formed to expose a plug(62) by selectively etching an insulating layer(63) formed on a substrate(60). A Ru film is deposited on the profile of the insulating layer(63). A photoresist layer is coated on the Ru film so as to fill the opening part. Isolated Ru storage electrodes(64) are formed by blanket etching of the photoresist layer to expose the insulating layer(63). The remaining photoresist layer and etch residues are simultaneously removed by cleaning using H2SO4 and H2O2.
|
| 申请公布号 |
KR20030056326(A) |
申请公布日期 |
2003.07.04 |
| 申请号 |
KR20010086526 |
申请日期 |
2001.12.28 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
CHOI, GEUN MIN;OH, GI JUN |
| 分类号 |
H01L21/308;H01L21/02;H01L21/311;H01L21/3213;H01L21/77;H01L21/8242;H01L27/04;H01L27/108;(IPC1-7):H01L27/04 |
主分类号 |
H01L21/308 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
