发明名称 |
System for improving thermal stability of copper damascene structure |
摘要 |
Disclosed is a system for fabricating a semiconductor device (100). An interconnect structure (110) is formed on the semiconductor device (100) and a cap (112) is deposited over the interconnect structure (110). The interconnect structure (110) is annealed with the overlying cap (112) in place. The cap (112) is then removed after the interconnect structure (110) is annealed.
|
申请公布号 |
US2003124828(A1) |
申请公布日期 |
2003.07.03 |
申请号 |
US20020114778 |
申请日期 |
2002.04.03 |
申请人 |
LU JIONG-PING;HONG QI-ZHONG;CHIU TZ-CHENG;JIN CHANGMING;PERMANA DAVID;TSUI TING |
发明人 |
LU JIONG-PING;HONG QI-ZHONG;CHIU TZ-CHENG;JIN CHANGMING;PERMANA DAVID;TSUI TING |
分类号 |
H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|