| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-frequency amplifier suppressing the variations in gain in a self-aligning way even in the case when the threshold voltage of a FET fluctuates due to the variations in a manufacturing process and the like and requiring no regulation from the exterior. SOLUTION: A field-effect transistor amplifying the high-frequency signal input to an input terminal to output the amplified signal to an output terminal and a drain resistor connected with the drain of the field-effect transistor are provided on the same semiconductor substrate. A resistor element is constituted by using a dummy gate 31 formed in the same process, and at the same time as the gate 21 of the field-effect transistor in such a manner as to have roughly the same width as the length L<SB>1</SB>of the gate 21 of the field-effect transistor. COPYRIGHT: (C)2003,JPO
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