发明名称 |
Manufacturing method of semiconductor device using mask pattern having high etching resistance |
摘要 |
A manufacturing method of semiconductor device comprises forming a mask material having an aromatic ring and carbon content of 80 wt % or more on an object, forming a mask material pattern by etching the mask material to a desired pattern, and etching the object to transfer the mask material pattern as a mask to the object.
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申请公布号 |
US6576562(B2) |
申请公布日期 |
2003.06.10 |
申请号 |
US20010014459 |
申请日期 |
2001.12.14 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OHUCHI JUNKO;SATO YASUHIKO;SHIOBARA EISHI;HAYASHI HISATAKA;OHIWA TOKUHISA;ONISHI YASUNOBU |
分类号 |
H01L21/027;H01L21/288;H01L21/311;H01L21/3205;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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