发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
PURPOSE: A plasma processing apparatus is provided to facilitate adjustment of impedance matching and improve stability of a plasma discharge stage by finely controlling the capacitance of a load capacitor when the impedance of a matching circuit varies. CONSTITUTION: The matching circuit(2A) is prepared for impedance matching between a radio-frequency generator and a plasma processing chamber(CN). One or a plurality of impedance converting circuits are provided between the matching circuit and the radio-frequency generator. The impedance converting circuit converts an impedance to decrease a difference in impedance to be matched by the matching circuit, thereby decreasing a change in the output impedance with a moving amount of a capacitance control of one of variable passive elements of the matching circuit, such as a load capacitor and a tuning capacitor.
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申请公布号 |
KR20030043670(A) |
申请公布日期 |
2003.06.02 |
申请号 |
KR20020071614 |
申请日期 |
2002.11.18 |
申请人 |
ALPS ELECTRIC CO., LTD.;OHMI TADAHIRO |
发明人 |
NAKANO AKIRA;KUMAGAI TADASHI;OHMI TADAHIRO |
分类号 |
H01L21/205;H01J37/32;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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