发明名称 PLASMA PROCESSING APPARATUS
摘要 PURPOSE: A plasma processing apparatus is provided to facilitate adjustment of impedance matching and improve stability of a plasma discharge stage by finely controlling the capacitance of a load capacitor when the impedance of a matching circuit varies. CONSTITUTION: The matching circuit(2A) is prepared for impedance matching between a radio-frequency generator and a plasma processing chamber(CN). One or a plurality of impedance converting circuits are provided between the matching circuit and the radio-frequency generator. The impedance converting circuit converts an impedance to decrease a difference in impedance to be matched by the matching circuit, thereby decreasing a change in the output impedance with a moving amount of a capacitance control of one of variable passive elements of the matching circuit, such as a load capacitor and a tuning capacitor.
申请公布号 KR20030043670(A) 申请公布日期 2003.06.02
申请号 KR20020071614 申请日期 2002.11.18
申请人 ALPS ELECTRIC CO., LTD.;OHMI TADAHIRO 发明人 NAKANO AKIRA;KUMAGAI TADASHI;OHMI TADAHIRO
分类号 H01L21/205;H01J37/32;(IPC1-7):H01L21/205 主分类号 H01L21/205
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